Hot Electrons in Semiconductors ePub download
by W.C. Dunlap
- ISBN: 0080226922
- ISBN13: 978-0080226927
- ePub: 1710 kb | FB2: 1574 kb
- Language: English
- Category: Physics
- Publisher: Pergamon Press (January 1978)
- Pages: 295
- Rating: 4.3/5
- Votes: 474
- Format: lit azw lrf lrf
Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, first published in 1950.
Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, first published in 1950. It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transistor
William Shockley's book on the physics of semiconductorsand the basic foundation of transistors. That's right, all we need is the price of a paperback book to sustain a non-profit library the whole world depends on.
William Shockley's book on the physics of semiconductorsand the basic foundation of transistors. We’re dedicated to reader privacy so we never track you.
C. Dunlap, "Germanium, Important New Semiconductor," G. E. Re. Fe. 52, 15-17 (1949). Fortunately, in the semiconductors silicon and germanium, there are cases in which conductivity is due to excess electrons only or to holes only. W. Johnson and K. Lark-Horovitz, "Neutron Irradiated Semiconductors," Phys. We shall discuss some specific examples for silicon 1 and indicate later how these are related to germanium. If the conductivity of the sample is due to excess electrons it is called n-type, since the current carriers act like negative charges; if due to holes, it is called p-type, since the carriers act like positive charges.
Advances in nanotechnology have generated semiconductor structures that are only a few molecular layers thick, and this has important consequences for the physics of electrons and phonons in such structures
Advances in nanotechnology have generated semiconductor structures that are only a few molecular layers thick, and this has important consequences for the physics of electrons and phonons in such structures. This book describes in detail how confinement of electrons and phonons in quantum wells and wires affects the physical properties of the semiconductor.
The steady state and time-dependent hot electron transport, thermal noise, hot phonon effect, the memory effect, and . The last part of this book consists of a chapter on the dynamic conductivity and the shot noise suppression of a double-carrier resonant tunneling system.
The application of Zubarev's nonequilibrium statistical operator to hot electron transport and its equivalence to the balance equation method are also presented.
Under certain conditions electrons in a semiconductor become much hotter than the surrounding crystal lattice. Series: Series on Semiconductor Science and Technology (Book 5). Hardcover: 528 pages. Publisher: Clarendon Press (February 19, 1998).
It provides a simple and analytical description about hot electron transport, particularly, in semiconductors with higher carrier density where the carrier-carrier collision is much stronger than the single particle scattering.
Hot Electrons in Semiconductors book. Goodreads helps you keep track of books you want to read. Start by marking Hot Electrons in Semiconductors: Physics and Devices as Want to Read: Want to Read savin. ant to Read.
Hot Carriers in Semiconductors. This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists.