» » Silicon Carbide, Volume 2: Power Devices and Sensors

Silicon Carbide, Volume 2: Power Devices and Sensors ePub download

by Peter Friedrichs,Tsunenobu Kimoto,Lothar Ley,Gerhard Pensl

  • Author: Peter Friedrichs,Tsunenobu Kimoto,Lothar Ley,Gerhard Pensl
  • ISBN: 3527409971
  • ISBN13: 978-3527409976
  • ePub: 1349 kb | FB2: 1104 kb
  • Language: English
  • Category: Physics
  • Publisher: Wiley-VCH; 1 edition (December 2, 2009)
  • Pages: 520
  • Rating: 4.3/5
  • Votes: 484
  • Format: mbr lrf mobi lrf
Silicon Carbide, Volume 2: Power Devices and Sensors ePub download

Silicon Carbide - this easy to manufacture compound of silicon and .

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. Peter Friedrichs is Managing Director at SiCED, a joint venture between Siemens and Infineon located in Erlangen, Germany. SiCED develops technologies for SiC power semiconductors and systems based on these devices.

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be. .This item: Silicon Carbide, Volume 2: Power Devices and Sensors. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices.

Read this book using Google Play Books app on your PC, android, iOS devices. Download for offline reading, highlight, bookmark or take notes while you read Silicon Carbide, Volume 2: Power Devices and Sensors. Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics.

Silicon Carbide book. Goodreads helps you keep track of books you want to read. Start by marking Silicon Carbide: Volume 2: Power Devices And Sensors as Want to Read: Want to Read savin. ant to Read. Silicon Carbide - this easy to manufacture compound of silicon and carbon.

Silicon Carbide, Volume 2: Power Devices and Sensors. About halfway through the book, solid-state electronics at a graduate level appears and includes essentially every kind of semiconductor device. Tsunenobu Kimoto, Department of Electronic Science and Engineering, Kyoto University, Japan.

Silicon Carbide– this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene.

Free delivery worldwide.

Peter Friedrichs, Tsunenobu Kimoto, Lothar Ley, Gerhard Pensl.

Volume 2 Silicon Carbide: Power Devices and Sensors. Part A View from Industry. 1 Present status and future prospects for electronics in electric vehicles/hybrid electric vehicles and expectations for wide-bandgap semiconductor devices 1 Kimimori Hamada. Introduction 21 . SiC in power electronics 22 . Summary 31. References 32.

Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.
E-Books Related to Silicon Carbide, Volume 2: Power Devices and Sensors: