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Silicon Heterostructure Devices ePub download

by John D. Cressler

  • Author: John D. Cressler
  • ISBN: 1420066900
  • ISBN13: 978-1420066906
  • ePub: 1538 kb | FB2: 1281 kb
  • Language: English
  • Category: Engineering
  • Publisher: CRC Press; 1 edition (December 13, 2007)
  • Pages: 472
  • Rating: 4.4/5
  • Votes: 324
  • Format: lrf rtf doc lrf
Silicon Heterostructure Devices ePub download

When you see a nicely presented set of data, the natural response is: How did they do that; what tricks did they use; and how can I do that for myself? Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged.

Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic . John D. Cressler received his P. in applied physics from Columbia University

Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. in applied physics from Columbia University. He is Professor of electrical and computer engineering at the Georgia Institute of Technology.

Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation

Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. The book provides an overview, characteristics, and derivative applications for each device covered.

An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source.

Silicon Heterostructure Devices. Book · January 2007 with 5 Reads. How we measure 'reads'. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication.

John D. Cressler (Author). ISBN-13: 978-1420066920. The 13-digit and 10-digit formats both work. Cressler has authored three books related to SiGe electronics engineering, two works of. . Cressler has authored three books related to SiGe electronics engineering, two works of non-fiction, and two novels. Technical Non-Fiction. Silicon-Germanium Heterojunction Bipolar Transistors, Artech House. The Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy, CRC Press. Extreme Environment Electronics, CRC Press. Silicon Earth: Introduction to the Microelectronics and Nanotechnology Revolution, Cambridge University Press. Reinventing Teenagers: The Gentle Art of Instilling.

Boca Raton London New York. CRC Press is an imprint of the Taylor & Francis Group, an informa business.

SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as  optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

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