Nuclear Methods in Semiconductor Physics: Proceedings (European Materials Research Society Symposia Proceedings) ePub download
by G. Langouche,Jair C. Soares,J. P. Stoquert
- ISBN: 0444894209
- ISBN13: 978-0444894205
- ePub: 1524 kb | FB2: 1839 kb
- Language: English
- Category: Engineering
- Publisher: North-Holland (April 1, 1992)
- Pages: 264
- Rating: 4.6/5
- Votes: 524
- Format: lrf mbr lit docx
The European Materials Society decided to hold a Symposium entitled Materials and Processes for Submicron Technologies in June 16-19, 1998 .
The European Materials Society decided to hold a Symposium entitled Materials and Processes for Submicron Technologies in June 16-19, 1998, within the yearly E-MRS Spring Meeting in Strasbourg, France.
G. Langouche; Jair C. Soares.
The method was applied to a variety of systems including polymer/polymer, polymer/silicon, and polymer/metal interfaces. This work demonstrates that the blister test provides a means of relating the mechanical strength of an interface to its microscopic dynamic and structural features.
פר 25. G. Langouche . Stoquert1 באפריל 1992. The broad scope of the contributions clearly demonstrates the growing interest in the use of sometimes fairly unconventional nuclear methods in the field of semiconductor physics.
Quantitative analyses of power loss mechanisms in semiconductor devices by thermal wave calorimetry (B. Bchner et a. Thermal wave probing of the optical electronic and thermal properties of semiconductors (D. Fournier, A. Boccara). Thermal wave measurements in ion-implanted silicon (G. Queirola et a.
Volume 1535 - Symposium a – Proceedings of the Multiscale Materials Modeling 2012 Conference.
Lightweight Products With Metal Foam - Properties and Methods of Processing R. neugebauer, ti.
Lightweight Products With Metal Foam - Properties and Methods of Processing R.
Materials Science Materials Science (miscellaneous). Physics and Astronomy Condensed Matter Physics. Conferences and Proceedings. 00001980, 00001987, 00001993.
Various methods to reduce defect states in tantalum oxide capacitors for DRAM applications.
Various methods to reduce defect states in tantalum oxide capacitors for DRAM applications. 864, p. 181-187 E. 2.